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CLP30-200B1
OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE
Application Specific Discretes A.S.DTM
MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : s Analog and ISDN line cards s PABX
DESCRIPTION The CLP30-200B1 is designed to protect telecommunication equipment. It provides both a transient overvoltage protection and an overcurrent protection. The external components (balanced resistors, ring relays contact, ...) needed by the CLP30-200B1 protection concept require very low power rating. This results in a very cost effective protection solution.
SO8
SCHEMATIC DIAGRAM (Top view) FEATURES s Dual bidirectional protection device. s High peak pulse current : IPP = 40A (5/310 s SURGE) IPP = 30A (10/1000 s SURGE) s Max. voltage at switching-on : 290V s Min. current at switching-off : 150mA
TIPL
1
TIPS
GND
GND
GND
GND
BENEFITS s Voltage and current controlled suppression. s Surface Mounting with SO8 package. s Very low power rating of external components on line card : balanced resistors, ring relay, low voltage SLIC protection.
RINGL
RINGS
July 1999 - Ed: 4
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CLP30-200B1
Peak surge Voltage voltage waveform (V) 2500 1000 5000 4000 1000 6000 8000 4000 2000 4000 2000 4000 2000 4000 1500 800 1000 2/10s 10/100s 2/10 s 10/700 s 1/60 ns 10/700 s 1.2/50 s 10/700 s 1.2/50 s 1.2/50 s 10/160 s 10/560 s 9/720 s Required peak current (A) 500 100 500 100 25 Current waveform 2/10 s 10/1000 s 2/10 s 5/310 s Minimum serial resistor to meet standard ( ) 20 25 40 50 0 0 0 50 5 22 0 50 0 22 17.5 12 0
Standard
Bellcore TR-NWT-1089 First level Bellcore TR-NWT-1089 Second level ITU-T-K20 / K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5
ESD contact discharge ESD air discharge 100 50 100 50 100 50 100 200 100 25 5/310 s 1/20 s 5/310 s 8/20 s 8/20 s 10/160 s 10/560 s 5/320 s
FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B
BLOCK DIAGRAM
TIPL TIPS
Overcurrent detector
OR SW1
Overvoltage detector
Overvoltage reference (> 200 V)
GND SW2 OR Overvoltage detector Overvoltage reference (> 200 V)
Overcurrent detector
RINGL
RINGS
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CLP30-200B1
Pin 1 2/3/6/7 4 5 8 Symbol TIPL GND RINGL RINGS TIPS Description TIP (Line side) Ground RING (Line side) RING (SLIC side) TIP (SLIC side)
APPLICATION NOTE 1.INTRODUCTION The aim of this section is to show the behavior of our new telecom line protection device. Fig.1 : Suscriber line protection topology 2. STMicroelectronics CLP30-200B1 CONCEPT 2.1 Evolution of the SLIC protection Over the years, the performances of the SLICs considerably increased and therefore the need of the protection has also evolved. The CLP30-200B1 is especially designed for the protection of this new generation of SLIC. For this, it is based on both overvoltage and overcurrent protection modes.
SLIC
"PRIMARY PROTECTION"
"SECONDARY PROTECTION"
telecommunication line
CLP30200B1
VOLTAGE REFERENCE
MDF EXCHANGE
LINE CARD
Fig.2 : Line card protection
I
Programmable thanks to an external resistor
Figure 1 is a simplified block diagram of a subscriber line protection that is mainly used so far. This shows two different things : s A "primary protection" located on the Main Distribution Frame (MDF) eliminates coarsely the high energy environmental disturbances (lightning transients and AC power mains disturbances) for which the ITU-T-K20 requires a 4kV 10/700 s test. This can be assumed either by gas-tubes or silicon protection such as the TLPxxM. s A "secondary protection" located on the line card eliminates finely the remaining transients that have not been totally suppressed by the first stage. The ITU-T-K20 requires a 1 kV 10/700 s test. At this stage, the protection is managed by the CLP30-200B1.
Programmable thanks to any external voltage reference
- VSWON
+ I SWON
V
+V SWON
- I SWON
Line Card operating conditions
The figure 2 summarises the performance of the CLP30-200B1 which basically holds the SLIC inside its correct voltage and current values.
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CLP30-200B1
APPLICATION CIRCUIT : CLP30-200B1 in line card Fig.3 : CLP30-200B1 in line card
PTC
TIP R sense I
R
TIPL TIPS 1
-Vbat
Rp Overcurrent detector 2 Overvoltage detector -Vbat
TIP
OR SW1
Overvoltage reference (> 200 V)
External voltage reference 1
SLIC
GND SW2 OR Overvoltage detector Overvoltage reference (> 200 V)
Rp
RING
2 Overcurrent detector Ring Generator
PTC
RING
RINGL
RINGS
R sense
R
Figure above shows the topology of a protected analog subscriber line at the line card side. s A first stage based on CLP30-200B1 manages the high power issued from the external surges. When used in ringing mode, the CLP30-200B1 operates in voltage mode and provides a symmetrical and bidirectional overvoltage protection above 200 V on both TIP and RING lines. When used in speech mode, the CLP30-200B1 operates in current mode and the activation current of the CLP30-200B1 is adjusted by RSENSE. s A second stage which is the external voltage reference device defines the firing threshold voltage during the speech mode and also assumes a residual power overvoltage suppression. This stage can be either a fixed or programmable device such as LCP1511D.
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CLP30-200B1
2.3 Ringing mode Fig.4 : Switching by voltage during ringing mode.
LG I
TIP
R sense
ILG
A1
TIPL TIPS 1/2 CLP200M Overcurrent detector 2 Overvoltage detector Overvoltage reference (>200V) 1
2 1
-200
VLG
OR SW1
1 3
+200
VLG
GND
In ringing mode (Ring relay in position 2), the only protection device involved is the CLP30-200B1. In normal conditions, the CLP30-200B1 operates in region 1 of A1 curve, and is idle. If an overvoltage occurring between TIP (or RING) and GND reaches the internal overvoltage reference (+/- 200V), the CLP30-200B1 acts and the line is short-circuited to GND. At this time the operating point moves to region 2 for positive surges (region 3 for negative surges). Once the surge current disappears, the device returns to its initial state (region 1). Fig.5 : Methode to adjust the reference voltage.
For surges occurring between TIP and RING, the CLP30-200B1 acts in the same way. This means that the CLP30-200B1 ensures a tripolar protection.
When used alone, the CLP30-200B1 acts at the internal overvoltage reference level (+/- 200 V). Furthermore, it is possible to adjust this threshold level to a lower voltage by using up to 4 fixed external voltage reference (VZ1 to VZ4) (see fig.5).
1
TIP
R sense
TIPL
TIPS VZ1 Overcurrent detector
2
OR SW1
Overvoltage detector
Overvoltage reference (>200V)
VZ2
GND SW2 OR Overvoltage detector Overvoltage reference (>200V) VZ3
Overcurrent detector VZ4 RINGL RINGS 1
RING
R sense
2
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CLP30-200B1
2.4 Speech mode Fig.6 : Switching by current during speech mode.
ILG
TIP R sense
ILG
TIPL
TIPS
1 Rp
-Vbat
Overcurrent detector 2 Overvoltage detector Overvoltage reference (>200V) External voltage reference
6 4
-VBAT
VLG
OR SW1
VLG
5
GND
In speech mode (Ring relay in position 1), the protection is provided by the combination of both CLP30-200B1 and the external voltage reference device (for example LCP1511D). In normal conditions, the working point of this circuit is located in region 4 of A2 curve : the CLP30-200B1 is idle. When a surge occurs on the line, the external voltage reference device clamps at GND or -Vbat respectively for positive and negative surges. This generates a current which is detected by RSENSE and causes the protection to act : the line is short-circuited to GND. The operating point moves to region 6 for positive surges or region 5 for negative surges.
Once the surge current falls below the switching-off current ISWOFF, the CLP30-200B1 returns to its initial state (region 4).
Furthermore, the CLP30-200B1 switches when an overvoltage, either positive or negative, occurs either : s simultaneously on both TIP and RING lines versus GND. s between TIP and RING. s on TIP (or RING) versus GND.
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CLP30-200B1
The choice of the switching-on current is function of the RSENSE resistors. Fig . 7a and 7b : Switching-on current versus RSENSE
Iswon negative surge ( mA )
1000 Iswon - @ 0C Iswon - @ +25C Iswon - @ +70C
1000
Iswon @ 25C ( mA )
Iswon + min Iswon + max Iswon - min Iswon - max
Rsense ( Ohms ) 100 1.6 3 6
100
Rsense ( Ohms )
1.6
3
6
This current (typically above 150 mA) should not activate the protection device CLP30-200B1. Therefore the level of activation is to be chosen just below this limit (typically 200mA). This level is adjusted through RSENSE. Figures 7a and 7b enable the designers to choose the right RSENSE value. Example: The choice of RSENSE = 3 ensures a negative triggering of -280 mA min and -380mA max. In this case, the positive triggering will be 220mA min and 320mA max. Thanks to the CLP30-200B1 topology, the surge current in the line is reduced after it. Because the remaining surge energy is low, the power ratings of RP, the relay contacts and the external voltage reference device may be kept low. This results in a significant cost reduction for the whole system.
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CLP30-200B1
ABSOLUTE MAXIMUM RATINGS (RSENSE = 3 ,Tamb = 25C) Symbol IPP Parameter Line to GND peak pulse current 10/1000 s (open circuit voltage wave shape 10/1000 s) 5/310 s (open circuit voltage wave shape 10/700 s) Non repetitive surge peak on-state current F = 50 Hz Storage temperature range Maximum junction temperature Lead temperature for soldering during 10 s. tp = 10 ms tp = 200 ms tp = 1 s Value 30 45 8.5 4.5 3.5 -40 to +150 150 260 Unit A A
ITSM
Tstg Tj TL
C C
ELECTRICAL CHARACTERISTICS (RSENSE = 3 , and Tamb = 25 C) Symbol ILGL Parameter Line to GND leakage current Test condtions VLG = 200 V Measured between TIP (or RING) and GND 200 Measured at 50 Hz between TIPL (or RINGL) and GND,one cycle Refer to test circuit fig 9 Positive surge Negative surge VLG = 0V VOSC= 200mVRMS F = 1MHz 150 220 370 320 470 100 290 Min Max 10 Unit A
VLG VSWON ISWOFF ISWON C
Line to GND operating voltage Line to GND voltage at SW1 or SW2 switching-on Line to GND negative current at SW1 or SW2 switching-off Line current at SW1 or SW2 switching-on Line to GND capacitance
V V mA mA pF
THERMAL RESISTANCE Symbol Rth(j-a) Junction to ambient Parameter Value 170 Unit C/W
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CLP30-200B1
Fig.8 : TEST CIRCUIT FOR ISWOFF PARAMETER : GO - NO GO TEST
TIPL or RINGL R -V D.U.T.
BAT
= - 48 V GND Surge generator
This is a GO-NO GO test which allows to confirm the switch-off current (IH) level in functional test circuit. TEST PROCEDURE - Adjust the current level at the ISWOFF value by short circuiting the D.U.T - Fire the D.U.T with a surge current : IPP = 10 A, 10/1000 s - The D.U.T will come back to the off-state within a duration of 50 ms max.
Fig. 9 : Typical variation of switching-on current (positive or negative) versus RSENSE resistor and junction temperature (see test condition Fig. 11).
Iswon negative surge ( mA )
1000 Iswon - @ 0C Iswon - @ +25C Iswon - @ +70C
Fig. 10 : Variation of switching-on current versus RSENSE at 25 C.
Iswon @ 25C ( mA )
1000 Iswon + min Iswon + max Iswon - min Iswon - max
Rsense ( Ohms ) 100 1.6 3 6
100
Rsense ( Ohms )
1.6
3
6
Fig. 11 : ISWON MEASUREMENT
- ISWON = l1 when the CLP30-200B1 switches on (l1 is progressively increased using R) - Both TIP and RING sides of the CLP30-200B1 are checked - RL = 10.
Rsense RL I1
fig. 12 : Relative variation of switching-off current versus junction temperature (for RSENSE between 3 and 10 ).
ISWOFF [TjC] / ISWOFF [25C]
1.4 1.2 1
48 V
TIPL
TIPS R GND
0.8 0.6 0.4 0 20 40 Temperature (C) 60 80
DUT
RINGL RINGS
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CLP30-200B1
Fig. 13 : Relative variation of switching-off current versus RSENSE (between 3 and 10 ).
ISWOFF [Rsense] / ISWOFF [4 ]
Fig. 14 : Relative variation of switching-on voltage versus dV/dt with an external resistor of 3 .
VSWON / VREF
1.12 1.10
1.08 1.06
1.6 1.4 1.2 1.0 0.8 0.6 0.4 4 6 8 Rsense ( ) 10
1.04 1.02 1.00 0.98 0.1
0.3
1
3
10
30
100
300
1000
dV/dt (V/s)
Fig. 15 : Relative variation of internal reference voltage versus junction temperature (ILG =1mA).
Fig. 16 : Capacitance (TIP/GND) versus applied voltage (typical values).
C (pF)
VREF [TjC] / V REF [25C]
1.10 1.05
70 50
1.00 0.95
30 20
0.90 0.85 -40 -20 0 20 40 60
Tj (C)
10
1
2
3
5
10 VR (V)
20
30
50
100
Fig. 17 : Surge peak current versus overload duration (maximum values).
10
ITSM(A)
8
6
4
2
t(s)
0 0.01 0.1 1 10 100 1000
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CLP30-200B1
PACKAGE MECANICAL DATA SO8 plastic DIMENSIONS REF. Millimetres Min.
L c1 C a3 a2 A b1
Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020
Typ. Max. Min. 1.75
A a1 a2 a3 b b1 0.65 0.35 0.19 0.25 0.50 0.1
0.25 0.004 1.65 0.85 0.025 0.48 0.014 0.25 0.007 0.50 0.010 45 (typ)
b e3
e
S
E
a1
D M
C c1
F
8
5
D E
4.8 5.8 1.27 3.81 3.8 0.4
5.0 6.2
0.189 0.228 0.050 0.150
0.197 0.244
1
4
e e3 F L M S MARKING Ordering code CLP30-200B1 CLP30-200B1RL Marking CLP30 CLP30 Package SO-8 SO-8 Weight 0.08g 0.08g
4.0
0.15
0.157 0.050 0.024
1.27 0.016 0.6 8 (max)
Base qty 100 2500
Delivery mode Tube Tape & Reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 11/11

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